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UM6K1N
Transistors
Electrical characteristics (Ta=25 ° C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Gate-source leakage
Symbol
I GSS
Min.
?
Typ.
?
Max.
±1
Unit
μ A
Conditions
V GS =±20V, V DS =0V
Drain-source breakdown voltage V (BR) DSS
30
?
?
V
I D = 10 μ A, V GS =0V
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
I DSS
V GS (th)
R DS (on)
Y fs
C iss
C oss
C rss
?
0.8
?
?
20
?
?
?
?
?
5
7
?
13
9
4
1.0
1.5
8
13
?
?
?
?
μ A
V
?
?
mS
pF
pF
pF
V DS = 30V, V GS =0V
V DS = 3V, I D = 100 μ A
I D = 10mA, V GS = 4V
I D = 1mA, V GS = 2.5V
I D = 10mA, V DS = 3V
V DS = 5V
V GS =0V
f=1MHz
Turn-on delay time
t d (on)
?
15
?
ns
V DD
5V
Rise time
Turn-off delay time
Fall time
t r
t d (off)
t f
?
?
?
35
80
80
?
?
?
ns
ns
ns
I D = 10mA
V GS = 5V
R L =500 ?
R G =10 ?
Electrical characteristic curves
0.15
4V
3V
200m
100m
V DS =3V
Pulsed
2
V DS =3V
I D =0.1mA
0.1
3.5V
2.5V
50m
20m
10m
5m
1.5
1
0.05
2V
2m
1m
0.5m
Ta=125 ° C
75 ° C
25 ° C
? 25 ° C
0.5
V GS =1.5V
0.2m
? 50 ? 25
0
0
1
2
3
4
5
0.1m
0
1
2
3
4
0
0
25
50
75
100
125 150
DRAIN-SOURCE VOLTAGE : V DS (V)
Fig.1 Typical Output Characteristics
GATE-SOURCE VOLTAGE : V GS (V)
Fig.2 Typical Transfer Characteristics
CHANNEL TEMPERATURE : Tch ( ° C)
Fig.3 Gate Threshold Voltage vs.
Channel Temperature
50
20
10
Ta=125 ° C
75 ° C
25 ° C
? 25 ° C
V GS =4V
Pulsed
50
20
10
Ta=125 ° C
75 ° C
25 ° C
? 25 ° C
V GS =2.5V
Pulsed
15
10
Ta=25 ° C
Pulsed
5
5
2
1
2
1
5
I D =0.1A
I D =0.05A
0.5
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.5
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0
0
5
10
15
20
DRAIN CURRENT : I D (A)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current ( )
DRAIN CURRENT : I D (A)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current ( )
GATE-SOURCE VOLTAGE : V GS (V)
Fig.6 Static Drain-Source On-State
Resistance vs. Gate-Source Voltage
Rev.B
2/3
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